One-Dimensional Edge Contacts to Two-Dimensional Transition-Metal Dichalcogenides: Uncovering the Role of Schottky-Barrier Anisotropy in Charge Transport across <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Mo</mml:mi><mml:mi mathvariant="normal">S</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math> /Metal Interfaces

Low-resistance ohmic contacts are a prerequisite for implementing two-dimensional transition-metal dichalcogenides (2D TMDs) in host of applications. Edge offer unique advantages, yet their electrical properties not fully understood. Employing an $a\phantom{\rule{0}{0ex}}b$ $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o$ framework, the authors find that edge to monolayer MoS${}_{2}$ pinned charge-neutrality level close valence band and $p$-type---unlike typical $n$-type top contacts. This anisotropy Fermi-level pinning complicates conduction through metal-TMD interfaces affects design guidelines low-resistance Challenges, potential mitigating solutions, opportunities leverage this discussed.